Datasheet

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Document Number: 83748
2 Rev. 1.9, 20-Oct-10
VO3062, VO3063
Vishay Semiconductors
Phototriac, Zero Crossing, 1.5 kV/μs dV/dt,
600 V
Notes
(1)
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s Thermal
Characteristics of Optocouplers application note.
OUTPUT
Off state output terminal voltage VO3062, VO3063 V
DRM
600 V
Peak repetitive surge current PW = 100 μs, 120 pps I
TSM
1A
Power dissipation P
diss
200 mW
On-state RMS current I
T(RMS)
100 mA
COUPLER
Isolation test voltage t = 1 s V
ISO
5300 V
RMS
Total power dissipation P
tot
300 mW
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 55 to + 150 °C
Soldering temperature
(2)
maximum 10 s T
sld
260 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Maximum LED junction temperature T
jmax.
125 °C
Maximum output die junction temperature T
jmax.
125 °C
Thermal resistance, junction emitter to board θ
JEB
150 °C/W
Thermal resistance, junction emitter to case θ
JEC
139 °C/W
Thermal resistance, junction detector to board θ
JDB
78 °C/W
Thermal resistance, junction detector to case θ
JDC
103 °C/W
Thermal resistance, junction emitter to
junction detector
θ
JED
496 °C/W
Thermal resistance, case to ambient θ
CA
3563 °C/W
ELECTRICAL CHARACTERISTCS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Reverse current V
R
= 6 V I
R
10 μA
Forward voltage I
F
= 30 mA V
F
1.2 1.5 V
OUTPUT
Leakage with LED off, either
direction
V
DRM
= 600 V I
DRM
10 500 nA
Critical rate of rise off-state voltage V
D
= 400 V dV/dt 1500 2000 V/μs
ABSOLUTE MAXIMUM RATINGS
(1)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
T
A
θ
CA
T
C
T
JD
T
JE
T
B
θ
EC
θ
EB
θ
DC
θ
DB
θ
BA
θ
DE
T
A
19996
Package