Datasheet

VLMU3500-...-060
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 27-Apr-16
2
Document Number: 84321
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Tolerances: ± 11 % for φ
e
, ± 0.1 V for V
F
, ± 1 nm for λ
p
.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
VLMU3500-...-060
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
DC forward current I
F
700 mA
Power dissipation P
V
2.8 W
Electrostatic discharge HBM: MIL-STD-883 C 3B ESD 8000 V
Junction temperature T
j
+125 °C
Operating temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Solder temperature T
sol
260 °C
Thermal resistance - junction to solder point R
thJS
8°C/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMU3500-...-060, ULTRAVIOLET
PARAMETER TEST CONDITION DEVICE TYPE SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 500 mA V
F
2.8 3.4 4 V
Radiant power
I
F
= 350 mA
φ
e
445 560 675
mWI
F
= 500 mA 620 780 940
I
F
= 700 mA 824 1037 1250
Radiant intensity
I
F
= 350 mA
l
e
- 395 -
mW/srI
F
= 500 mA - 550 -
I
F
= 700 mA - 730 -
Peak wavelength I
F
= 500 mA
VLMU3500-385-060
λ
p
380 385 390 nm
VLMU3500-395-060 390 395 400 nm
VLMU3500-405-060 400 405 410 nm
Angle of half intensity I
F
= 500 mA ϕ -± 30- deg
Reverse current V
R
= 5 V I
R
- - 10 μA
RADIANT POWER CLASSIFICATION (I
F
= 500 mA)
GROUP MIN. MAX. UNIT
U062 620 660
mW
U066 660 700
U070 700 740
U074 740 780
U078 780 820
U082 820 860
U086 860 900
U090 900 940
PEAK WAVELENGTH CLASSIFICATION (I
F
= 500 mA)
GROUP MIN. MAX. UNIT
Q380 380 385
nm
Q385 385 390
Q390 390 395
Q395 395 400
Q400 400 405
Q405 405 410