Datasheet

VLMO21.., VLMS21.., VLMY21..
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 28-Nov-14
2
Document Number: 81233
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Driving the LED in reverse direction is suitable for a short term application
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 2
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 2
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
VLMS21.., VLMO21.., VLMY21..
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
(1)
V
R
6V
DC forward current T
amb
≤ 60 °C I
F
30 mA
Surge forward current t
p
≤ 10 μs I
FSM
0.5 A
Power dissipation P
V
95 mW
Junction temperature T
j
+100 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Thermal resistance junction/ambient Mounted on PC board (pad size > 5 mm
2
)R
thJA
480 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified
VLMS21.., RED
PARAMETER TEST CONDITION PARTS SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA VLMS2100 I
V
2.8 7.1 - mcd
I
F
= 10 mA VLMS21H2K1 I
V
3.55 - 9 mcd
I
F
= 10 mA VLMS21J2L1 I
V
5.6 - 14 mcd
I
F
= 10 mA VLMS21H2L1 I
V
3.55 - 14 mcd
Dominant wavelength I
F
= 10 mA λ
d
624 628 636 nm
Peak wavelength I
F
= 10 mA λ
p
- 640 - nm
Angle of half intensity I
F
= 10 mA
j
-± 60- deg
Forward voltage I
F
= 20 mA V
F
-2.13 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15-pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMO21.., SOFT ORANGE
PARAMETER TEST CONDITION PARTS SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA VLMO2100 I
V
3.55 7.1 - mcd
I
F
= 10 mA VLMO21H2K1 I
V
3.55 - 9 mcd
I
F
= 10 mA VLMO21J2L1 I
V
5.6 - 14 mcd
I
F
= 10 mA VLMO2H2L1 I
V
3.55 - 14 mcd
Dominant wavelength I
F
= 10 mA λ
d
598 605 611 nm
Peak wavelength I
F
= 10 mA λ
p
- 605 - nm
Angle of half intensity I
F
= 10 mA
j
-± 60- deg
Forward voltage I
F
= 20 mA V
F
-2.13 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15-pF