Datasheet

VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20..
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 28-Nov-14
3
Document Number: 81339
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 1.6
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 1.6
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 1.6
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMO20.., SOFT ORANGE
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 2 mA
VLMO2000 l
V
4.5 9 - mcd
VLMO20J2M1 l
V
5.6 - 22.4 mcd
VLMO20K1L2-34 l
V
7.1 - 18 mcd
VLMO20K2L2-35 l
V
9-18mcd
Dominant wavelength I
F
= 2 mA
VLMO20K1L2-34 λ
d
602 - 607 nm
VLMO20K2L2-35 λ
d
602 - 609 nm
VLMO20.. λ
d
598 605 611 nm
Peak wavelength I
F
= 2 mA λ
p
- 610 - nm
Angle of half intensity I
F
= 2 mA ϕ -± 60- deg
Forward voltage I
F
= 2 mA V
F
-1.82.2V
Reverse voltage I
R
= 10 μA V
R
5-- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15- pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMY20.., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 2 mA
VLMY2000 l
V
3.55 7.1 - mcd
VLMY20J1L2 l
V
4.5 - 18 mcd
VLMY20K1L2 l
V
7.1 - 18 mcd
Dominant wavelength I
F
= 2 mA λ
d
581 588 594 nm
Peak wavelength I
F
= 2 mA λ
p
- 590 - nm
Angle of half intensity I
F
= 2 mA ϕ -± 60- deg
Forward voltage I
F
= 2 mA V
F
-1.82.2V
Reverse voltage I
R
= 10 μA V
R
5-- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15- pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMP20.., PURE GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 2 mA VLMP20D2G1 l
V
0.56 - 2.24 mcd
Dominant wavelength I
F
= 2 mA λ
d
555 - 565 nm
Peak wavelength I
F
= 2 mA λ
p
- 565 - nm
Angle of half intensity I
F
= 2 mA ϕ -± 60- deg
Forward voltage I
F
= 2 mA V
F
-1.82.2V
Reverse voltage I
R
= 10 μA V
R
5-- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15- pF