Datasheet

VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20..
www.vishay.com
Vishay Semiconductors
Rev. 2.0, 28-Nov-14
2
Document Number: 81339
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Driving the LED in reverse direction is suitable for a short term application
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 1.6
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 1.6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
VLMS20.., VLMK20.., VLMO20.., VLMY20.., VLMP20..
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
(1)
V
R
5V
DC forward current T
amb
≤ 100 °C I
F
15 mA
Surge forward current t
p
≤ 10 μs I
FSM
0.1 A
Power dissipation P
V
40 mW
Junction temperature T
j
+125 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Thermal resistance junction/ambient Mounted on PC board (pad size > 5 mm
2
)R
thJA
580 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMS20.., SUPER RED
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 2 mA
VLMS2000 l
V
2.24 4.5 - mcd
VLMS20H2K1 l
V
3.55 - 9 mcd
VLMS20H2L1 l
V
3.55 - 14 mcd
VLMS20J2K2 l
V
5.6 - 11.2 mcd
VLMS20J2L1 l
V
5.6 - 14 mcd
Dominant wavelength I
F
= 2 mA λ
d
- 630 - nm
Peak wavelength I
F
= 2 mA λ
p
- 643 - nm
Angle of half intensity I
F
= 2 mA ϕ -± 60- deg
Forward voltage I
F
= 2 mA V
F
-1.82.2V
Reverse voltage I
R
= 10 μA V
R
5-- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15- pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMK20.., AMBER
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 2 mA
VLMK20J2L1 l
V
5.6 - 14 mcd
VLMK20J2L2 l
V
5.6 - 18 mcd
VLMK2000 l
V
7.1 16 - mcd
VLMK20K1L2 l
V
7.1 - 18 mcd
Dominant wavelength I
F
= 2 mA λ
d
612 622 624 nm
Peak wavelength I
F
= 2 mA λ
p
- 615 - nm
Angle of half intensity I
F
= 2 mA ϕ -± 60- deg
Forward voltage I
F
= 2 mA V
F
-1.82.2V
Reverse voltage I
R
= 10 μA V
R
5-- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15- pF