Datasheet

VLMK23.., VLMF23.., VLME23..
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 28-Nov-14
2
Document Number: 81681
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Driving the LED in reverse direction is suitable for a short term application
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 1.6
Note
(1)
In one packing unit I
Vmax.
/I
Vmin.
≤ 1.6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
VLMK23.., VLMF23.., VLME23..
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
(1)
V
R
5V
DC Forward current T
amb
≤ 80 °C I
F
30 mA
Surge forward current t
p
≤ 10 μs I
FSM
0.1 A
Power dissipation P
V
80 mW
Junction temperature T
j
+125 °C
Operating temperature range T
amb
-40 to +100 °C
Storage temperature range T
stg
-40 to +100 °C
Thermal resistance
junction/ambient
mounted on PC board
(pad size > 5 mm
2
)
R
thJA
580 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMK23.., RED
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 20 mA
VLMK23P2R1 I
V
56 - 140 mcd
VLMK23Q2S1 I
V
90 - 224 mcd
VLMK23P2S1 I
V
56 - 224 mcd
VLMK23R1S1 I
V
112 - 224 mcd
Dominant wavelength I
F
= 20 mA λ
d
- 630 - nm
Peak wavelength I
F
= 20 mA λ
p
- 643 - nm
Angle of half intensity I
F
= 20 mA ϕ -± 60- deg
Forward voltage I
F
= 20 mA V
F
-1.92.6V
Reverse voltage I
R
= 10 μA V
R
5--V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15-pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
VLMF23.., SOFT ORANGE
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 20 mA
VLMF23Q2S1 I
V
90 - 224 mcd
VLMF23R2T1 I
V
140 - 355 mcd
VLMF23Q2T1 I
V
90 - 355 mcd
Dominant wavelength I
F
= 20 mA λ
d
598 605 611 nm
Peak wavelength I
F
= 20 mA λ
p
- 610 - nm
Angle of half intensity I
F
= 20 mA ϕ -± 60- deg
Forward voltage I
F
= 20 mA V
F
-22.6V
Reverse voltage I
R
= 10 μA V
R
5--V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-15-pF