Datasheet

VESDxx-02V
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 04-Jan-2019
3
Document Number: 83367
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL CHARACTERISTICS VESD01-02V 
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--1V
Reverse voltage at I
R
= 100 μA V
R
1--V
Reverse current at V
R
= 1 V I
R
- - 100 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
1.5 - - V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-9-V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
- 180 - pF
ELECTRICAL CHARACTERISTICS VESD03-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--3V
Reverse voltage at I
R
= 20 μA V
R
3--V
Reverse current at V
R
= 3 V I
R
--20μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
4--V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-12- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
- 110 - pF
ELECTRICAL CHARACTERISTICS VESD05-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage at I
R
= 0.1 μA V
R
5--V
Reverse current at V
R
= 5 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
6.5 - - V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-20- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-55-pF
ELECTRICAL CHARACTERISTICS VESD08-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--8V
Reverse voltage at I
R
= 0.1 μA V
R
8--V
Reverse current at V
R
= 8 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
9--V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-30- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-35-pF
ELECTRICAL CHARACTERISTICS VESD12-02V
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--12V
Reverse voltage at I
R
= 0.1 μA V
R
12 - - V
Reverse current at V
R
= 12 V I
R
--0.1μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
14 - - V
Reverse clamping voltage at I
PP
(see fig. 1) V
C
-25- V
Capacitance at V
R
= 0 V; f = 1 MHz C
D
-30-pF