Datasheet

VCUT0505B-HD1
www.vishay.com
Vishay Semiconductors
Rev. 2.3, 03-Jan-2019
2
Document Number: 81852
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CUT THE SPIKES WITH VCUT0505B-HD1:
The VCUT0505B-HD1 is a bidirectional and symmetrical (BiSy) ESD protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VCUT0505B-HD1 offers a high
isolation (low leakage current, low capacitance) within the specified working range. Due to the short leads and small package
size of the tiny LLP1006-2L package the line inductance is very low, so that fast transients like an ESD strike can be clamped
with minimal over- or undershoots.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
ELECTRICAL CHARACTERISTICS VCUT0505B-HD1 
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage At I
R
= 0.1 μA V
R
5--V
Reverse current At V
R
= 5 V I
R
--0.1μA
Reverse breakdown voltage At I
R
= 1 mA V
BR
7--V
Reverse clamping voltage
At I
PP
= 1 A V
C
--12V
At I
PP
= I
PPM
= 3.5 A V
C
--16V
Capacitance
At V
R
= 0 V; f = 1 MHz C
D
-1820pF
At V
R
= 2.5 V; f = 1 MHz C
D
-14.5- pF
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
I
ESD
(%)
t (ns)
2nd line
Rise time = 0.7 ns to 1 ns
53
27
20557
10
100
1000
10000
0
20
40
60
80
100
010203040
Axis Title
1st line
2nd line
2nd line
I
PPM
(%)
t (µs)
2nd line
20 µs to 50 %
8 µs to 100 %
20548
0
2
4
6
8
10
12
14
16
18
20
0123456
V
R
(V)
C
D
(pF)
21122
f = 1 MHz
-10
-8
-6
-4
-2
0
2
4
6
8
10
0.01 0.1 1 10 100 1000 10 000
I
R
(µA)
V
R
(V)
21123
Pin 1 to 2