Datasheet

VBUS05L1-DD1
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Jan-2019
2
Document Number: 81188
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBUS05L1-DD1: ESD PROTECTION WITH LOWEST LOAD CAPACITANCE
The VBUS05L1-DD1 is a bidirectional and symmetrical (BiSy) ESD protection device which clamps positive and negative
overvoltage transients to ground. Connected between the signal or data line and the ground the VBUS05L1-DD1 offers a high
isolation (low leakage current, lowest capacitance) within the specified working range. Due to the short leads and small package
size of the tiny LLP1006-2M package the line inductance is very low, so that fast transients like an ESD strike can be clamped
with minimal over- or undershoots.
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS VBUS05L1-DD1
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5.5V
Reverse voltage at I
R
= 0.05 μA V
R
5.5 - - V
Reverse current at V
RWM
= 5.5 V I
R
- - 0.05 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
78.49.5V
Reverse clamping voltage
at I
PP
1 A V
C
-11.514 V
at I
PP
= I
PPM
= 2 A V
C
-1417V
Capacitance
at V
R
= 0 V, f = 1 MHz C
D
- 0.33 0.4 pF
at V
R
= 2.5 V, f = 1 MHz C
D
-0.34- pF
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
I
ESD
(%)
t (ns)
2nd line
Rise time = 0.7 ns to 1 ns
53
27
20557
10
100
1000
10000
0
20
40
60
80
100
010203040
Axis Title
1st line
2nd line
2nd line
I
PPM
(%)
t (µs)
2nd line
20 µs to 50 %
8 µs to 100 %
20548