Datasheet

VBUS054B-HSF
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 04-Jan-2019
2
Document Number: 81624
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS VBUS054B-HSF
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of line which can be protected N
channel
- - 4 lines
Reverse stand-off voltage
at I
R
= 0.1 μA,
pin 1, 3, 4 or 6 to pin 2
V
RWM
--5V
Reverse current
at V
IN
= V
RWM
= 5 V,
pin 1, 3, 4 or 6 to pin 2
I
R
- < 0.01 0.1 μA
Reverse breakdown voltage
at I
R
= 1 mA,
pin 5 to pin 2
V
BR
6.3 7.1 8 V
at I
R
= 1 mA,
pin 1, 3, 4 or 6 to pin 2
V
BR
6.9 7.9 8.7 V
Reverse clamping voltage
at I
PP
= 3 A; pin 1, 3, 4 or 6 to pin 2;
acc. IEC 61000-4-5
V
C
--15V
Forward clamping voltage
at I
F
= 3 A; pin 2 to pin 1, 3, 4 or 6;
acc. IEC 61000-4-5
V
F
--5V
Capacitance
Pin 1, 3, 4 or 6 to pin 2
V
IN
(at pin 1, 3, 4 or 6) = 0 V and
V
BUS
(at pin 5) = 5 V; f = 1 MHz
C
D
-0.81pF
Pin 1, 3, 4 or 6 to pin 2
V
IN
(at pin 1, 3, 4 or 6) = 2.5 V and
V
BUS
(at pin 5) = 5 V; f = 1 MHz
C
D
-0.50.8pF
Line symmetry Difference of the line capacitances dC
D
--0.05pF
Supply line capacitance Pin 5 to pin 2; at V
R
= 0; f = 1 MHz C
ZD
- 110 - pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548