Datasheet

ManualsBrandsVishay ManualsDiodesESD Protection Diode 3A 5V 45W LLP75-6L

VBUS054B-HSF

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 04-Jan-2019

Document Number: 81624

For technical questions, contact: ESDprotection@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4-Line BUS-Port ESD Protection

MARKING (example only)

Dot = pin 1 marking

XX = date code

YY = type code (see table below)

DESIGN SUPPORT TOOLS

FEATURES

• Ultra compact LLP75-6L package

• Low package height < 0.6 mm

• 4-line USB ESD protection

• Low leakage current

• Low load capacitance C

= 0.8 pF

• ESD immunity acc. IEC 61000-4-2

± 15 kV contact discharge

± 15 kV air discharge

• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu)

(no Sn)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912



20453

20397

21001

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Available

Models

ORDERING INFORMATION

DEVICE NAME ORDERING CODE

TAPED UNITS PER REEL

(8 mm TAPE ON 7" REEL)

MINIMUM ORDER QUANTITY

VBUS054B-HSF VBUS054B-HSF-GS08 3000 15 000

PACKAGE DATA

DEVICE NAME

PACKAGE

NAME

TYPE

CODE

WEIGHT

MOLDING COMPOUND

FLAMMABILITY RATING

MOISTURE

SENSITIVITY LEVEL

SOLDERING CONDITIONS

VBUS054B-HSF LLP75-6L U3 4.2 mg UL 94 V-0

MSL level 1

(according J-STD-020)

Peak temperature max. 260 °C

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Peak pulse current

Pin 1, 3, 4 or 6 to pin 2

acc. IEC 61000-4-5; t

= 8/20 μs; single shot

PPM

Pin 5 to pin 2

acc. IEC 61000-4-5; t

= 8/20 μs; single shot

PPM

10 A

Peak pulse power

Pin 1, 3, 4 or 6 to pin 2

acc. IEC 61000-4-5; t

= 8/20 μs; single shot

45 W

Pin 5 to pin 2

acc. IEC 61000-4-5; t

= 8/20 μs; single shot

200 W

ESD immunity

Contact discharge acc. IEC61000-4-2; 10 pulses V

ESD

± 15 kV

Air discharge acc. IEC61000-4-2; 10 pulses V

ESD

± 15 kV

Operating temperature Junction temperature T

-40 to +125 °C

Storage temperature T

STG

-55 to +150 °C

Summary of content (9 pages)

PAGE 1
VBUS054B-HSF www.vishay.com Vishay Semiconductors 4-Line BUS-Port ESD Protection FEATURES 6 5 • Ultra compact LLP75-6L package 4 • Low package height < 0.6 mm • 4-line USB ESD protection • Low leakage current 1 20397 2 • Low load capacitance CD = 0.8 pF 3 20453 • ESD immunity acc. IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge 1 • e4 - precious metal (e.g.
PAGE 2
VBUS054B-HSF www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VBUS054B-HSF PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of line which can be protected Nchannel - - 4 lines Reverse stand-off voltage at IR = 0.1 μA, pin 1, 3, 4 or 6 to pin 2 VRWM - - 5 V Reverse current at VIN = VRWM = 5 V, pin 1, 3, 4 or 6 to pin 2 IR - < 0.01 0.1 μA at IR = 1 mA, pin 5 to pin 2 VBR 6.3 7.1 8 V at IR = 1 mA, pin 1, 3, 4 or 6 to pin 2 VBR 6.9 7.9 8.
PAGE 3
VBUS054B-HSF www.vishay.com Vishay Semiconductors 20 1.0 15 0.8 Pin 1, 3, 4 or 6 to Pin 2 0.7 10 VC (V) Pin 1, 3, 4 or 6 to Pin 2 0.6 C IN (pF) Measured acc. IEC 61000-4-5 (8/20 µs - wave form) f = 1 MHz; V BUS (at Pin 5) = 5 V 0.9 0.5 Pin 5 to Pin 2 5 0.4 VC Pin 2 to Pin 5 0 0.3 0.2 -5 Pin 2 to Pin 1, 3, 4 or 6 0.1 - 10 0.0 0 1 2 3 20549 4 5 0 6 V IN (V) Fig. 3 - Typical Input Capacitance CIN at Pin 1, 3, 4, or 6 vs. Input Voltage VIN 2 3 4 Fig.
PAGE 4
VBUS054B-HSF www.vishay.com Vishay Semiconductors 140 200 150 100 VC-ESD (V) 100 VC-ESD (V) acc. IEC 61000-4-2 contact discharge 120 Pin 1, 3, 4 or 6 to Pin 2 50 acc. IEC 61000-4-2 contact discharge VC-ESD 0 - 50 Pin 5 to Pin 2 80 60 40 20 VC-ESD 0 - 100 - 20 - 150 - 40 - 200 Pin 2 to Pin 5 - 60 Pin 2 to Pin 1, 3, 4 or 6 - 80 - 250 0 5 20555 10 15 0 20 VESD (kV) 20556 Fig. 9 - Typical Peak Clamping Voltage at ESD Contact Discharge (acc.
PAGE 5
VBUS054B-HSF www.vishay.com Vishay Semiconductors BACKGROUND KNOWLEDGE: A Zener- or avalanche diode is an ideal device for “cutting” or “clamping” voltage spikes or voltage transients down to low and uncritical voltage values. The breakthrough voltage can easily be adjusted by the chip-technology to any desired value within a wide range. Up to about 6 V the “Zener-effect” (tunnel-effect) is responsible for the breakthrough characteristic. Above 6 V the so-called “avalanche-effect” is responsible.
PAGE 6
VBUS054B-HSF www.vishay.com  One mode of use is,… in the very first moment before any pulses have arrived, all three diodes are completely discharged (so the diode capacitances are empty of charge) the first signal pulse with an amplitude > 0.5 V will drive the upper PN-diode (D1) in a forward direction and “sees” the empty capacitance of the Z-diode (ZD).
PAGE 7
VBUS054B-HSF www.vishay.com Vishay Semiconductors 0.45 (0.018) 0.55 (0.022) 0.2 (0.008) 0.3 (0.012) 0.2 (0.008) 0.3 (0.012) 1 (0.039) 0.2 (0.008) 0.3 (0.012) Heat sink 0.95 (0.037) 1.05 (0.041) PACKAGE DIMENSIONS in millimeters (inches): LLP75-6L 0.5 (0.020) 0.6 (0.024) 0.54 (0.021) 0.60 (0.023) 0.05 (0.002) 0 (0.000) 0.15 (0.006) 0.25 (0.010) 1.65 (0.065) 1.55 (0.061) 1.55 (0.061) 1.65 (0.065) Pin 1 marking Foot print recommendation: 0.5 (0.020) 0.5 (0.020) 0.3 (0.012) 0.3 (0.
PAGE 8
VBUS054B-HSF www.vishay.com Vishay Semiconductors LLP75-6x S9 F5 Pad layout - view from top / seen at bottom side S8-V-3906.02-004 (4) 10.01.2005 Rev. 1.9, 04-Jan-2019 Pin 1 - location Document Number: 81624 8 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 9
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