Datasheet

New Product
V60100C & VB60100C
Vishay General Semiconductor
Document Number: 88942
Revision: 24-Jun-09
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3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
T
A
= 150 °C
T
A
= 100 °C
T
A
= 25 °C
T
A
= 125 °C
Instantaneous Forward Cu
rrent (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.8 1
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
1
0.001
0.1
0.01
Instantaneous Reverse Current (mA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.1 1 10 100
10 000
1000
100
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
0.01 0.1 1 10 100
10
1
0.1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)