Datasheet

New Product
V60100C & VB60100C
Vishay General Semiconductor
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Document Number: 88942
Revision: 24-Jun-09
2
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
100 (minimum) -
V
Instantaneous forward voltage per diode
(1)
I
F
= 5 A
I
F
= 10 A
I
F
= 15 A
I
F
= 20 A
I
F
= 30 A
T
A
= 25 °C
V
F
0.45
0.52
0.58
0.63
0.73
-
-
0.63
-
0.79
I
F
= 5 A
I
F
= 10 A
I
F
= 15 A
I
F
= 20 A
I
F
= 30 A
T
A
= 125 °C
0.36
0.45
0.53
0.58
0.66
-
-
0.58
-
0.70
Reverse current at rated V
R
per diode
(2)
V
R
= 80 V
T
A
= 25 °C
T
A
= 125 °C
I
R
24
13
500
20
µA
mA
V
R
= 100 V
T
A
= 25 °C
T
A
= 125 °C
65
30
1000
-
µA
mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60100C VB60100C UNIT
Typical thermal resistance per diode R
θJC
2.5 2.5 °C/W
ORDERING INFORMATION
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V60100C-E3/4W 1.89 4W 50/tube Tube
TO-263AB VB60100C-E3/4W 1.38 4W 50/tube Tube
TO-263AB VB60100C-E3/8W 1.38 8W 800/reel Tape and reel
Figure 1. Forward Current Derating Curve
Average Forward Current (A)
Case Temperature (°C)
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Resistive or Inductive Load
70
Figure 2. Forward Power Loss Characteristics Per Diode
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 0.2
D = 1.0
0
0 5 10 15 20 25 30 35
5
10
15
20
25
30
Average Power Loss (W)
Ave
rage For
wa
rd C
urrent (A)
D = t
p
/T t
p
T