Datasheet

V60100C & VB60100C
Vishay General Semiconductor
Document Number: 88942
Revision: 24-Jun-09
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1
New Product
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.36 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 30 A
V
RRM
100 V
I
FSM
320 A
V
F
at I
F
= 30 A 0.66 V
T
J
max. 150 °C
TMBS
®
TO-220AB
V60100C
1
2
3
CASE
PIN 2
PIN 1
PIN 3
VB60100C
1
2
K
TO-263AB
PIN 1
PIN 2
K
HEATSINK
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60100C VB60100C UNIT
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1)
per device
per diode
I
F(AV)
60
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
320 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 140 mH per diode
E
AS
450 mJ
Peak repetitive reverse current at t
p
= 2 µs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/µs
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C