Datasheet
V40100C, VI40100C
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Vishay General Semiconductor
Revision: 16-Aug-13
3
Document Number: 89162
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Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.8 1
100
10
1
0.1
T
A
= 25 °C
T
A
= 125 °C
T
A
= 150 °C
T
A
= 100 °C
Instantaneous Forward Current (A)
10 20 30 40
50
60 70 80 90 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
110
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
10 000
1000
100
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case