Datasheet

V20100C, VF20100C, VB20100C, VI20100C
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Vishay General Semiconductor
Revision: 14-Aug-13
3
Document Number: 88977
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Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 4 - Typical Reverse Characteristics
Per Diode
Fig. 5 - Typical Junction Capacitance
Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Per Diode
Fig. 7 - Typical Transient Thermal Impedance
Per Diode
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Reverse Current (mA)
10
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
V(B,I)20100C
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
VF20100C