Datasheet

V8P10
www.vishay.com
Vishay General Semiconductor
Revision: 30-Jan-2019
1
Document Number: 89005
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High Current Density Surface Mount
TMBS
®
(Trench MOS Barrier Schottky) Rectifier
Ultra Low V
F
= 0.466 V at I
F
= 4 A
DESIGN SUPPORT TOOLS
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified 
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
8.0 A
V
RRM
100 V
I
FSM
150 A
E
AS
100 mJ
V
F
at I
F
= 8 A 0.582 V
T
J
max. 150 °C
Package SMPC (TO-277A)
Diode variations Single
K
2
1
SMPC (TO-277A)
eSMP
®
Series
Anode 1
Anode 2
Cathode
K
click logo to get started
Available
Models
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V8P10 UNIT
Device marking code V810
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
8.0 A
Peak forward surge current 10 ms single half sine-wave 
superimposed on rated load
I
FSM
150 A
Non-repetitive avalanche energy at I
AS
= 2.0 A, T
J
= 25 °C E
AS
100 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C I
RRM
1.0 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C