Datasheet

V80100PW
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Vishay General Semiconductor
Revision: 20-Dec-13
3
Document Number: 89183
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Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.7 0.8
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.1 0.3 0.5
0.01
0.1
1
10
100
1000
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Transient Thermal Impedance (°C/W)
10
1
0.1
0.1 1 10 1000.01
Junction to Case
TO-3PW
0.645 (16.38)
0.625 (15.87)
0.323 (8.20)
0.313 (7.95)
0.245 (6.23)
0.225 (5.72)
0.840 (21.34)
0.820 (20.83)
0.170 (4.32)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.090 (2.29)
0.080 (2.03)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.225 (5.72)
0.205 (5.21)
0.565 (14.35)
0.545 (13.84)
0.160 (4.06)
0.140 (3.56)
0.551 (14.00)
0.537 (13.64)
0.077 (1.96)
0.063 (1.60)
0.079 (2.01)
0.065 (1.65)
0.467 (11.86)
0.453 (11.51)
5° Ref.
Both Sides
R0.155 (R3.94)
R0.145 (R3.68)
3° Ref.
30° Ref.
10° Typ.
Both Sides
3° Ref.
3° Ref.
0.050 (1.27)
0.175 (4.45)
0.165 (4.19)
0.030 (0.75)
0.020 (0.50)
0.098 (2.50)
0.083 (2.12)