Datasheet

V80100PW
www.vishay.com
Vishay General Semiconductor
Revision: 20-Dec-13
2
Document Number: 89183
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Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width  40 ms


RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
100 (minimum) - V
Instantaneous forward voltage per diode
I
F
= 10 A
T
A
= 25 °C
V
F
(1)
0.49 -
V
I
F
= 20 A 0.59 -
I
F
= 40 A 0.76 0.84
I
F
= 10 A
T
J
= 125 °C
0.43 -
I
F
= 20 A 0.55 -
I
F
= 40 A 0.64 0.76
Reverse current
per diode
V
R
= 80 V
T
A
= 25 °C
I
R
(2)
38 - μA
T
A
= 125 °C 17 - mA
V
R
= 100 V
T
A
= 25 °C 85 1000 μA
T
A
= 125 °C 33 76 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V80100PW UNIT
Typical thermal resistance
per diode
R
JC
1.5
°C/W
per device 0.8
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-3PW V80100PW-M3/4W 4.5 4W 30/tube Tube
50
60
80
40
20
0
025
50 75 100
125
150
175
Case Temperature (°C)
Average Forward Current (A)
Resistive or Inductive Load
Mounted on Specic Heatsink
0
0
4
8
20
24
28
32
36
4 8 12 28 32 36 40 44 48
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
242016
16
12