Datasheet

V50100PW
www.vishay.com
Vishay General Semiconductor
Revision: 20-Dec-13
3
Document Number: 89181
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.7 0.8
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Current (A)
0.1 0.3 0.5
20 30 40 50 60 70 80 90 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Reverse Current (mA)
110
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
10 000
1000
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 1 10 100
t - Pulse Duration (s)
10
1
0.1
Transient Thermal Impedance (°C/W)
TO-3PW
0.645 (16.38)
0.625 (15.87)
0.323 (8.20)
0.313 (7.95)
0.245 (6.23)
0.225 (5.72)
0.840 (21.34)
0.820 (20.83)
0.170 (4.32)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.090 (2.29)
0.080 (2.03)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.225 (5.72)
0.205 (5.21)
0.565 (14.35)
0.545 (13.84)
0.160 (4.06)
0.140 (3.56)
0.551 (14.00)
0.537 (13.64)
0.077 (1.96)
0.063 (1.60)
0.079 (2.01)
0.065 (1.65)
0.467 (11.86)
0.453 (11.51)
5° Ref.
Both Sides
R0.155 (R3.94)
R0.145 (R3.68)
3° Ref.
30° Ref.
10° Typ.
Both Sides
3° Ref.
3° Ref.
0.050 (1.27)
0.175 (4.45)
0.165 (4.19)
0.030 (0.75)
0.020 (0.50)
0.098 (2.50)
0.083 (2.12)