Datasheet

V50100PW
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Vishay General Semiconductor
Revision: 20-Dec-13
2
Document Number: 89181
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Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width  40 ms


RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
100 (minimum) - V
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.48 -
V
I
F
= 10 A 0.56 -
I
F
= 20 A 0.69 -
I
F
= 25 A 0.76 0.84
I
F
= 5 A
T
A
= 125 °C
0.39 -
I
F
= 10 A 0.50 -
I
F
= 20 A 0.61 -
I
F
= 25 A 0.66 0.74
Reverse current
per diode
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
23 - μA
T
A
= 125 °C 11 - mA
V
R
= 100 V
T
A
= 25 °C - 1000 μA
T
A
= 125 °C 29 80 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V50100PW UNIT
Typical thermal resistance
per diode
R
JC
1.5
°C/W
per device 0.8
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-3PW V50100PW-M3/4W 4.5 4W 30/tube Tube
Case Temperature (°C)
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Average Forward Current (A)
Resistive or Inductive Load
22
0
028
Average Forward Current (A)
Average Power Loss (W)
2420161284
20
18
16
14
12
10
8
6
4
2
D = t
p
/T t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0