Datasheet

V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3
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Vishay General Semiconductor
Revision: 05-Nov-13
3
Document Number: 89046
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Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.6
100
10
1
0.1
T
A
= 100 °C
T
A
= 25 °C
0.6 1.0
T
A
= 150 °C
T
A
= 125 °C
1.4
10 20 30 40
50
60 70 80 90 100
1
0.1
0.01
0.0001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.001
Reverse Voltage (V)
Junction Capacitance (pF)
10
100
1000
0.1 1 10 100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
V(B,I)20150C
Junction to Case
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
VF20150C
Junction to Case