Datasheet

New Product
V10P10
www.vishay.com
Vishay General Semiconductor
Revision: 09-Sep-13
1
Document Number: 89006
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High Current Density Surface Mount
MOS Barrier Schottky Rectifier Ultra Low
V
F
= 0.453 V at I
F
= 5 A
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward volatge drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
100 V
I
FSM
180 A
E
AS
100 mJ
V
F
at I
F
= 10 A 0.574 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variations Single die
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2Cathode
K
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10P10 UNIT
Device marking code V1010
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum average forward rectified current (fig. 1) I
F(AV)
10 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
180 A
Non-repetitive avalanche energy
at I
AS
= 2.0 A, T
J
= 25 °C
E
AS
100 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C
I
RRM
1.0 A
Operating junction and storage temperature range T
J
, T
STG
- 40 to + 150 °C