Datasheet

US1A, US1B, US1D, US1G, US1J, US1K, US1M
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Vishay General Semiconductor
Revision: 28-Apr-14
3
Document Number: 88768
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Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Reverse Leakage Characteristics
Fig. 7 - Typical Junction Capacitance
Fig. 8 - Typical Transient Thermal Impedance
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
US1A thru US1G
Percent of Rated Peak Reverse Voltage (%)
0 20406080100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
10
1
0.1
0.01
Instantaneous Reverse Leakage
Current (µA)
US1A thru US1G
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.2 0.7 1.2 1.7 2.2 2.7 3.2
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
100
10
1
0.1
0.01
US1J thru US1M
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
1
0.1
0.01
0 20406080100
Instantaneous Reverse Leakage
Current (µA)
US1J thru US1M
Reverse Voltage (V)
0.1 1 10 100
100
10
1
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
US1J thru US1M
US1A thru US1G
0.01 0.1 1 10 100
100
10
1
0.1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)