Datasheet

www.vishay.com
4
Document Number 84122
Rev. 1.3, 19-Apr-04
VISHAY
TZM-Series
Vishay Semiconductors
Typical Characteristics (T
amb
= 25 °C unless otherwise specified)
Fig. 1 Total Power Dissipation vs. Ambient Temperature
Fig. 2 Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Fig. 3 Typical Change of Working Voltage vs. Junction
Temperature
0 40 80 120 160
0
100
300
400
500
600
P –Total Power Dissipation ( mW)
tot
T
amb
– Ambient Temperature(°C )
200
95 9602
200
0 5 10 15 20
1
10
100
1000
V –VoltageChange( mV )
Z
V
Z
– Z-Voltage(V)
25
95 9598
I
Z
=5mA
T
j
=25°C
–60 0 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V – RelativeVoltageChange
Ztn
T
j
– Junction Temperature (°C )
240
95 9599
V
Ztn
=V
Zt
/V
Z
(25°C)
TK
VZ
=10 x 10
–4
/K
8x10
–4
/K
–4 x 10
–4
/K
6x10
–4
/K
4x10
–4
/K
2x10
–4
/K
–2 x 10
–4
/K
0
Fig. 4 Temperature Coefficient of Vz vs. Z-Voltage
Fig. 5 Diode Capacitance vs. Z-Voltage
Fig. 6 Forward Current vs. Forward Voltage
0102030
–5
0
5
10
15
TK –Temperature Coefficient of V ( 10 /K)
VZ
V
Z
– Z-Voltage(V)
50
95 9600
40
Z
–4
I
Z
=5mA
0 5 10 15
0
50
100
150
200
C – Diode Capacitance ( pF )
D
V
Z
– Z-Voltage(V)
25
95 9601
20
T
j
=25°C
V
R
=2V
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I – Forward Current ( mA)
F
V
F
– Forward Voltage(V)
T
j
=25°C