Datasheet

www.vishay.com
2
Document Number 81056
Rev. 1.4, 08-Apr-04
VISHAY
TSUS540.
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Typical Characteristics (T
amb
= 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Ty p. Max Unit
Forward Voltage I
F
= 100 mA, t
p
= 20 ms V
F
1.3 1.7 V
I
F
= 1.5 A, t
p
= 100 µsV
F
2.2 3.4 V
Temp. Coefficient of V
F
I
F
= 100 mA TK
VF
- 1.3 mV/K
Reverse Current V
R
= 5 V I
R
100 µA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
30 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Radiant Intensity I
F
= 100 mA, t
p
= 20 ms I
e
714 mW/sr
I
e
10 17 mW/sr
I
e
15 20 mW/sr
I
F
= 1.5 A, t
p
= 100 µsI
e
60 140 mW/sr
I
e
85 160 mW/sr
I
e
120 190 mW/sr
Radiant Power I
F
= 100 mA, t
p
= 20 ms φ
e
13 mW
φ
e
14 mW
φ
e
15 mW
Temp. Coefficient of φ
e
I
F
= 20 mA TK
φe
- 0.8 %/K
Angle of Half Intensity ϕ ± 22 deg
Peak Wavelength I
F
= 100 mA λ
p
950 nm
Spectral Bandwidth I
F
= 100 mA ∆λ 50 nm
Temp. Coefficient of λ
p
I
F
= 100 mA TK
λp
0.2 nm/K
Rise Time I
F
= 100 mA t
r
800 ns
I
F
= 1.5 A t
r
400 ns
Fall Time I
F
= 100 mA t
f
800 ns
I
F
= 1.5 A t
f
400 ns
Fig. 1 Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
P - Power Dissipation ( mW )
V
T
amb
- Ambient Temperature ( °C)
94 7957
R
thJA
20 40 60 80 1000
Fig. 2 Forward Current vs. Ambient Temperature
020406080
0
50
100
150
200
250
I – Forward Current ( mA)
F
T
amb
– Ambient Temperature ( °C )
100
94 7988
R
thJA