Datasheet

TSHG6410
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 23-Aug-11
2
Document Number: 81870
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.5 1.8 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
45 90 135 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
900 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
55 mW
Temperature coefficient of
e
I
F
= 100 mA TK
e
- 0.35 %/K
Angle of half intensity ± 18 deg
Peak wavelength I
F
= 100 mA
p
820 850 880 nm
Spectral bandwidth I
F
= 100 mA  40 nm
Temperature coefficient of
p
I
F
= 100 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA t
r
20 ns
Fall time I
F
= 100 mA t
f
13 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
18 MHz
Virtual source diameter d2.1mm