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TSHG6410

www.vishay.com

Vishay Semiconductors

Rev. 1.3, 23-Aug-11

Document Number: 81870

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Speed Infrared Emitting Diode, 850 nm,

GaAlAs Double Hetero

DESCRIPTION

TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength: 

= 850 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = ± 18°

• Low forward voltage

• Suitable for high pulse current operation

• High modulation bandwidth: f

= 18 MHz

• Good spectral matching with CMOS cameras

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Note

** Please see document “Vishay Material Category Policy”:

www.vishay.com/doc?99902

APPLICATIONS

• Infrared radiation source for operation with CMOS

cameras

• High speed IR data transmission

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT I

(mW/sr)  (deg) p (nm) tr (ns)

TSHG6410 90 ± 18 850 20

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TSHG6410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Forward current I

100 mA

Peak forward current t

/T = 0.5, t

= 100 μs I

200 mA

Surge forward current t

= 100 μs I

FSM

Power dissipation P

180 mW

Junction temperature T

100 °C

Operating temperature range T

amb

- 40 to + 85 °C

Storage temperature range T

stg

- 40 to + 100 °C

Soldering temperature t  5 s, 2 mm from case T

260 °C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm,

soldered on PCB

thJA

230 K/W

Summary of content (5 pages)

PAGE 1
TSHG6410 www.vishay.
PAGE 2
TSHG6410 www.vishay.com Vishay Semiconductors 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Forward Current Limit vs.
PAGE 3
TSHG6410 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Tamb < 50 °C tp/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 10 1 e- 0.2 100 0.5 100 0.01 0.1 0.1 1 10 100 tp - Pulse Duration (ms) 16031 1 1.25 Φe, rel - Relative Radiant Power 1000 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 0 1 18873 1 3 2 VF - Forward Voltage (V) 4 800 Fig. 3 - Forward Current vs.
PAGE 4
TSHG6410 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) 35.3 ± 0.55 < 0.7 8.7 ± 0.3 (4.5) 7.7 ± 0.15 Ø 5.8 ± 0.15 A Area not plane Ø 5 ± 0.15 + 0.2 - 0.1 1 min. 0.6 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.11-4 Issue: 2; 19.05.09 21809 Rev. 1.3, 23-Aug-11 Document Number: 81870 4 For technical questions, contact: emittertechsupport@vishay.
PAGE 5
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