Datasheet

TSFF5410
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
1
Document Number: 81091
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: 
p
= 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f
c
= 24 MHz
• Good spectral matching to Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr)  (deg) 
p
(nm) t
r
(ns)
TSFF5410 70 ± 22 870 15
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSFF5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
180 mW