Datasheet

TSAL6100
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
2
Document Number: 81009
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21211
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.35 1.6 V
I
F
= 1 A, t
p
= 100 μs V
F
2.6 3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
25 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
80 130 400 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
650 1000 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms 
e
35 mW
Temperature coefficient of 
e
I
F
= 20 mA TK
e
- 0.6 %/K
Angle of half intensity  ± 10 deg
Peak wavelength I
F
= 100 mA 
p
940 nm
Spectral bandwidth I
F
= 100 mA  50 nm
Temperature coefficient of 
p
I
F
= 100 mA TK
p
0.2 nm/K
Rise time I
F
= 100 mA t
r
800 ns
Fall time I
F
= 100 mA t
f
800 ns
Virtual source diameter Method: 63 % encircled energy d 3.7 mm