Datasheet

TSAL4400
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 03-Nov-16
2
Document Number: 81006
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21317
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 300 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21318
I
F
- Forward Current (mA)
R
thJA
= 300 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
- 1.35 1.6 V
I
F
= 1 A, t
p
= 100 μs V
F
-2.63 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
--1.8-mV/K
Reverse current V
R
= 5 V I
R
- - 10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
-60-pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
16 36 80 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
135 290 - mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φ
e
-40-mW
Temperature coefficient of φ
e
I
F
= 20 mA TKφ
e
- -0.6 - %/K
Angle of half intensity ϕ -± 25- deg
Peak wavelength I
F
= 100 mA λ
p
- 940 - nm
Spectral bandwidth I
F
= 100 mA Δλ -25-nm
Temperature coefficient of λ
p
I
F
= 100 mA TKλ
p
-0.25-nm/K
Rise time I
F
= 100 mA t
r
-15-ns
Fall time I
F
= 100 mA t
f
-15-ns
t
p
- Pulse Duration (ms)
96 11987
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
I - Forward Current (A)
F
t
p
/T = 0.01
I
FSM
= 1 A (Single Pulse)
0.05
0.1
0.5
1.0
1
10
100
10 000
01234
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
1000
t
p
= 100 µs
t
p
/T = 0.001
13600