Datasheet

TLVH420., TLVS4200, TLVY4200, TLVG4200, TLVP420.
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 08-Aug-12
2
Document Number: 83057
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLVH4200, TLVH4201, RED
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous flux I
F
= 15 mA
TLVH4200 φ
V
10 55 - mlm
TLVH4201 φ
V
40 - 125 mlm
Dominant wavelength I
F
= 10 mA λ
d
612 - 625 nm
Peak wavelength I
F
= 10 mA λ
p
- 635 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 85- deg
Forward voltage I
F
= 20 mA V
F
-2.43 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLVS4200, SOFT ORANGE
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous flux I
F
= 15 mA TLVS4200 φ
V
10 70 - mlm
Dominant wavelength I
F
= 10 mA λ
d
598 - 611 nm
Peak wavelength I
F
= 10 mA λ
p
- 605 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 85- deg
Forward voltage I
F
= 20 mA V
F
-2.43 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLVY4200, YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous flux I
F
= 15 mA TLVY4200 φ
V
10 30 - mlm
Dominant wavelength I
F
= 10 mA λ
d
581 - 594 nm
Peak wavelength I
F
= 10 mA λ
p
- 585 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 85- deg
Forward voltage I
F
= 20 mA V
F
-2.43 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLVG4200, GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous flux I
F
= 15 mA TLVG4200 φ
V
10 30 - mlm
Dominant wavelength I
F
= 10 mA λ
d
562 - 575 nm
Peak wavelength I
F
= 10 mA λ
p
- 555 - nm
Angle of half intensity I
F
= 10 mA ϕ -± 85- deg
Forward voltage I
F
= 20 mA V
F
-2.43 V
Reverse voltage I
R
= 10 μA V
R
615- V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
-50-pF