Datasheet

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2
Document Number 83056
Rev. 1.7, 21-Sep-07
Vishay Semiconductors
TLUV5300
Note:
1)
T
amb
= 25 °C, unless otherwise specified
2)
in one packing unit I
Vmin
/I
Vmax
≤ 0.5
Note:
1)
T
amb
= 25 °C, unless otherwise specified
2)
in one packing unit I
Vmin
/I
Vmax
≤ 0.5
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLUV5300, RED
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
Per diode
Luminous intensity
2)
I
F
= 10 mA I
V
12.5 mcd
Dominant wavelength
I
F
= 10 mA λ
d
612 625 nm
Peak wavelength
I
F
= 10 mA λ
p
630 nm
Angle of half intensity
I
F
= 10 mA
ϕ ± 30 deg
Forward voltage
I
F
= 20 mA V
F
23V
Reverse voltage
I
R
= 10 μAV
R
615 V
Junction capacitance
V
R
= 0, f = 1 MHz C
j
50 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLUV5300, GREEN
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
Per diode
Luminous intensity
2)
I
F
= 10 mA I
V
12.5 mcd
Dominant wavelength
I
F
= 10 mA λ
d
552 575 nm
Peak wavelength
I
F
= 10 mA λ
p
565 nm
Angle of half intensity
I
F
= 10 mA
ϕ ±30 deg
Forward voltage
I
F
= 20 mA V
F
2.4 3 V
Reverse voltage
I
R
= 10 μAV
R
615 V
Junction capacitance
V
R
= 0, f = 1 MHz C
j
50 pF
Figure 1. Power Dissipation vs. Ambient Temperature
P
V
- Power Dissipation (mW)
95 9983
0
25
50
75
125
100
T
amb
- Ambient Temperature (°C)
020
40
60 80 100
Figure 2. Forward Current vs. Ambient Temperature for InGaN
0
10
20
30
40
60
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
95 9984
50
020406080 100