Datasheet
TLUG240., TLUO240., TLUY240.
www.vishay.com
Vishay Semiconductors
Rev. 2.2, 22-Apr-13
2
Document Number: 83053
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
In one packing unit I
Vmin.
/I
Vmax.
0.5
Note
(1)
In one packing unit I
Vmin.
/I
Vmax.
0.5
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
TLUO240., TLUY240., TLUG240.
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage V
R
6V
DC forward current
TLUO240. I
F
30 mA
TLUY240. I
F
30 mA
TLUG240. I
F
30 mA
Surge forward current t
p
10 μs I
FSM
1A
Power dissipation T
amb
55 °C
TLUO240. P
V
100 mW
TLUY240. P
V
100 mW
TLUG240. P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 55 to + 100 °C
Soldering temperature
t 3 s, 2 mm from body T
sd
260 °C
t 5 s, 4 mm from body T
sd
260 °C
Thermal resistance junction/
ambient
TLUO240. R
thJA
450 K/W
TLUY240. R
thJA
450 K/W
TLUG240. R
thJA
450 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLUO240., RED
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA
TLUO2400 I
V
1.6 2 mcd
TLUO2401 I
V
4520mcd
Dominant wavelength I
F
= 10 mA
d
612 625 nm
Peak wavelength I
F
= 10 mA
p
630 nm
Angle of half intensity I
F
= 10 mA ± 20 deg
Forward voltage I
F
= 20 mA V
F
23V
Reverse voltage I
R
= 10 μA V
R
615 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLUY240., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
(1)
I
F
= 10 mA
TLUY2400 I
V
14 mcd
TLUY2401 I
V
2.5 8 12.5 mcd
Dominant wavelength I
F
= 10 mA
d
581 594 nm
Peak wavelength I
F
= 10 mA
p
585 nm
Angle of half intensity I
F
= 10 mA ± 20 deg
Forward voltage I
F
= 20 mA V
F
2.4 3 V
Reverse voltage I
R
= 10 μA V
R
615 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF