Datasheet
www.vishay.com
2
Document Number 83053
Rev. 2.1, 23-Mar-11
Vishay Semiconductors
TLUG240., TLUO240., TLUY240.
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical support, please contact: LED@vishay.com
Note:
1)
in one packing unit I
Vmin.
/I
Vmax.
0.5
Note:
1)
in one packing unit I
Vmin.
/I
Vmax.
0.5
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
TLUO240., TLUY240., TLUG240.
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage
V
R
6V
DC forward current
TLUO240. I
F
30 mA
TLUY240. I
F
30 mA
TLUG240. I
F
30 mA
Surge forward current
t
p
10 µs I
FSM
1A
Power dissipation
T
amb
55 °C
TLUO240. P
V
100 mW
TLUY240. P
V
100 mW
TLUG240. P
V
100 mW
Junction temperature
T
j
100 °C
Operating temperature range
T
amb
- 40 to + 100 °C
Storage temperature range
T
stg
- 55 to + 100 °C
Soldering temperature
t 3 s, 2 mm from body T
sd
260 °C
t 5 s, 4 mm from body T
sd
260 °C
Thermal resistance junction/
ambient
TLUO240. R
thJA
450 K/W
TLUY240. R
thJA
450 K/W
TLUG240. R
thJA
450 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLUO240., RED
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
1)
I
F
= 10 mA
TLUO2400
I
V
1.6 2 mcd
TLUO2401
I
V
4520mcd
Dominant wavelength
I
F
= 10 mA
d
612 625 nm
Peak wavelength
I
F
= 10 mA
p
630 nm
Angle of half intensity
I
F
= 10 mA
± 20 deg
Forward voltage
I
F
= 20 mA V
F
23V
Reverse voltage
I
R
= 10 µA V
R
615 V
Junction capacitance
V
R
= 0, f = 1 MHz C
j
50 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
TLUY240., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Luminous intensity
1)
I
F
= 10 mA
TLUY2400
I
V
14 mcd
TLUY2401
I
V
2.5 8 12.5 mcd
Dominant wavelength
I
F
= 10 mA
d
581 594 nm
Peak wavelength
I
F
= 10 mA
p
585 nm
Angle of half intensity
I
F
= 10 mA
± 20 deg
Forward voltage
I
F
= 20 mA V
F
2.4 3 V
Reverse voltage
I
R
= 10 µA V
R
615 V
Junction capacitance
V
R
= 0, f = 1 MHz C
j
50 pF