Datasheet

TELEFUNKEN Semiconductors
TLS.510.
Rev. A1: 01.06.1995 3 (8)
Green (TLSG510. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity I
F
= 10 mA, I
Vmin
/I
Vmax
≥ 0.5 TLSG5100 I
V
0.4 1 mcd
y
F
,
Vmin Vmax
TLSG5101 I
V
1 2 mcd
Dominant wavelength I
F
= 10 mA
d
562 575 nm
Peak wavelength I
F
= 10 mA
p
565 nm
Angle of half intensity I
F
= 10 mA ϕ ±50 deg
Forward voltage I
F
= 20 mA V
F
2.4 3 V
Reverse voltage I
R
= 10 A V
R
6 15 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
Typical Characteristics (T
amb
= 25 C, unless otherwise specified)
020406080
0
25
50
75
100
125
P – Power Dissipation ( mW )
V
T
amb
– Ambient Temperature ( °C )
100
95 10918
Figure 1. Power Dissipation vs. Ambient Temperature
0
10
20
30
40
60
020406080
I – Forward Current ( mA )
F
T
amb
– Ambient Temperature ( °C )
100
95 10046
50
Figure 2. Forward Current vs. Ambient Temperature
0.01 0.1 1 10
1
10
100
1000
10000
t
p
– Pulse Length ( ms )
100
95 10079
I – Forward Current ( mA )
F
t
p
/T=0.01
0.02
0.05
0.1
0.2
1
0.5
T
amb
65°C
Figure 3. Forward Current vs. Pulse Length
0.4 0.2 0 0.2 0.4
0.6
95 10082
0.6
0.9
0.8
0°
30°
10
°
20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Luminous Intensity
v rel
Figure 4. Rel. Luminous Intensity vs. Angular Displacement