Datasheet

TELEFUNKEN Semiconductors
TLS.510.
Rev. A1: 01.06.19952 (8)
Absolute Maximum Ratings
T
amb
= 25°C, unless otherwise specified
TLSH510. ,TLSY510. ,TLSG510.
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
R
6 V
DC forward current I
F
30 mA
Surge forward current t
p
≤ 10 s I
FSM
1 A
Power dissipation T
amb
≤ 65 C P
V
100 mW
Junction temperature T
j
100 C
Storage temperature range T
stg
–55 to +100 C
Soldering temperature t ≤ 5 s, 2 mm
from body
T
sd
260 C
Thermal resistance junction/ambient R
thJA
350 K/W
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Red (TLSH510. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity I
F
= 10 mA, I
Vmin
/I
Vmax
≥ 0.5 TLSH5100 I
V
0.63 1.5 mcd
y
F
,
Vmin Vmax
TLSH5101 I
V
1 2 mcd
Dominant wavelength I
F
= 10 mA
d
640 nm
Peak wavelength I
F
= 10 mA
p
650 nm
Angle of half intensity I
F
= 10 mA ϕ ±50 deg
Forward voltage I
F
= 20 mA V
F
2 3 V
Reverse voltage I
R
= 10 A V
R
6 15 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
Yellow (TLSY510. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity I
F
= 10 mA, I
Vmin
/I
Vmax
≥ 0.5 TLSY5100 I
V
0.4 1 mcd
y
F
,
Vmin Vmax
TLSY5101 I
V
1 3 mcd
Dominant wavelength I
F
= 10 mA
d
581 594 nm
Peak wavelength I
F
= 10 mA
p
585 nm
Angle of half intensity I
F
= 10 mA ϕ ±50 deg
Forward voltage I
F
= 20 mA V
F
2.4 3 V
Reverse voltage I
R
= 10 A V
R
6 15 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF