Datasheet

TLH.42..
Vishay Semiconductors
2 (10)
Rev. A2, 07-Sep-00
www.vishay.com Document Number 83005
Absolute Maximum Ratings
T
amb
= 25 _ C, unless otherwise specified
TLHR42.. ,TLHO42.. ,TLHY42.. ,TLHG42.. ,TLHP42..
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
R
6 V
DC forward current I
F
30 mA
Surge forward current t
p
≤ 10 m s I
FSM
1 A
Power dissipation T
amb
≤ 60 ° C P
V
100 mW
Junction temperature T
j
100 ° C
Operating temperature range T
amb
–40 to +100 ° C
Storage temperature range T
stg
–55 to +100 ° C
Soldering temperature t ≤ 5 s, 2 mm from body T
sd
260 ° C
Thermal resistance junction/ambient R
thJA
400 K/W
Optical and Electrical Characteristics
T
amb
= 25 _ C, unless otherwise specified
High efficiency red (TLHR42.. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
1)
TLHR4200 I
V
4 8 mcd
Luminous intensity
1)
I
F
= 10 mA TLHR4201 I
V
6.3 10 mcd
y
F
TLHR4205 I
V
10 15 mcd
Dominant wavelength I
F
= 10 mA l
d
612 625 nm
Peak wavelength I
F
= 10 mA l
p
635 nm
Angle of half intensity I
F
= 10 mA ϕ ±22 deg
Forward voltage I
F
= 20 mA V
F
2 3 V
Reverse voltage I
R
= 10 m A V
R
6 15 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
1)
in one Packing Unit I
V
Min./ I
V
Max. v 0.5
Soft orange (TLHO42.. )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity
1)
I
F
=10mA
TLHO4200 I
V
4 10 mcd
Luminous
intensity
1)
I
F
=
10
mA
TLHO4201 I
V
10 18 mcd
Dominant wavelength I
F
= 10 mA l
d
598 611 nm
Peak wavelength I
F
= 10 mA l
p
605 nm
Angle of half intensity I
F
= 10 mA ϕ ±22 deg
Forward voltage I
F
= 20 mA V
F
2.4 3 V
Reverse current V
R
= 6 V I
R
10 m A
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
1)
in one Packing Unit I
V
Min./ I
V
Max. v 0.5