Datasheet

www.vishay.com
2
Document Number 83009
Rev. 1.5, 31-Aug-04
VISHAY
TLHG / O / P / R / Y4900
Vishay Semiconductors
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Red
TLHR4900
1)
in one Packing Unit I
Vmin
/I
Vmax
≤ 0.5
Soft Orange
TLHO4900
1)
in one Packing Unit I
Vmin
/I
Vmax
≤ 0.5
Yellow
TLHY4900
1)
in one Packing Unit I
Vmin
/I
Vmax
≤ 0.5
Storage temperature range T
stg
- 55 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from body T
sd
260 °C
Thermal resistance junction/
ambient
R
thJA
400 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity
1)
I
F
= 10 mA I
V
6.3 13 mcd
Dominant wavelength I
F
= 10 mA λ
d
612 625 nm
Peak wavelength I
F
= 10 mA λ
p
635 nm
Angle of half intensity I
F
= 10 mA ϕ ± 16 deg
Forward voltage I
F
= 20 mA V
F
23V
Reverse voltage I
R
= 10 µAV
R
615 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity
1)
I
F
= 10 mA I
V
10 26 mcd
Dominant wavelength I
F
= 10 mA λ
d
598 611 nm
Peak wavelength I
F
= 10 mA λ
p
605 nm
Angle of half intensity I
F
= 10 mA ϕ ± 16 deg
Forward voltage I
F
= 20 mA V
F
2.4 3 V
Reverse voltage I
R
= 10 µAV
R
615 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity
1)
I
F
= 10 mA I
V
10 26 mcd
Dominant wavelength I
F
= 10 mA λ
d
581 594 nm
Peak wavelength I
F
= 10 mA λ
p
585 nm
Angle of half intensity I
F
= 10 mA ϕ ± 16 deg
Forward voltage I
F
= 20 mA V
F
2.4 3 V
Reverse voltage I
R
= 10 µAV
R
615 V
Junction capacitance V
R
= 0, f = 1 MHz C
j
50 pF
Parameter Test condition Symbol Value Unit