Datasheet

Document Number 83007
Rev. 1.4, 18-Sep-07
www.vishay.com
3
Vishay Semiconductors
TLHG/R/Y460.
Note:
1)
T
amb
= 25 °C, unless otherwise specified
2)
In one packing unit I
Vmin
/I
Vmax
≤ 0.5
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLHG46.., GREEN
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
2)
I
F
= 10 mA
TLHG4600
I
V
12 mcd
TLHG4601
I
V
1.6 3.5 mcd
TLHG4605
I
V
46 mcd
Dominant wavelength
I
F
= 10 mA λ
d
562 575 nm
Peak wavelength
I
F
= 10 mA λ
p
565 nm
Angle of half intensity
I
F
= 10 mA
ϕ ± 60 deg
Forward voltage
I
F
= 20 mA V
F
2.4 3 V
Reverse voltage
I
R
= 10 µA V
R
615 V
Junction capacitance
V
R
= 0, f = 1 MHz C
j
50 pF
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
100806040
0
25
50
75
100
125
P- Power Dissipation (mW)
V
T
amb
- Ambient Temperature (°C)
95 10904
200
0
10
20
30
40
60
I
F
- Forward Current (mA)
95 10905
50
T
amb
- Ambient Temperature (°C)
100806040200
Figure 3. Forward Current vs. Pulse Length
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
0.02
0.05
0.1
0.2
1
0.5
t
p
/T= 0.01
T
amb
65 ° C
≤
0.01 0.1 1 10
1
10
100
1000
10000
t
p
- Pulse Length (ms)
100
95 10047
I - Forward Current (mA)
F
0.4 0.2 0 0.2 0.4
0.6
95 10043
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
I - RelativeLuminous Intensity
v rel