Datasheet

VS-50RIA Series
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Vishay Semiconductors
Revision: 11-Mar-14
2
Document Number: 93711
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Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° sinusoidal conduction
50 A
94 °C
Maximum RMS on-state current I
T(RMS)
80 A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
1430
A
t = 8.3 ms 1490
t = 10 ms
100 % V
RRM
reapplied
1200
t = 8.3 ms 1255
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
10.18
kA
2
s
t = 8.3 ms 9.30
t = 10 ms
100 % V
RRM
reapplied
7.20
t = 8.3 ms 6.56
Maximum I
2
t for fusing I
2
t
t = 0.1 to 10 ms, no voltage reapplied, 
T
J
= T
J
maximum
101.8 kA
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x  x I
T(AV)
< I <  x I
T(AV)
), T
J
= T
J
maximum 0.94
V
High level value of threshold voltage V
T(TO)2
( x I
T(AV)
< I < 20 x  x I
T(AV)
), T
J
= T
J
maximum 1.08
Low level value of on-state
slope resistance
r
t1
(16.7 % x  x I
T(AV)
< I <  x I
T(AV)
), T
J
= T
J
maximum 4.08
m
High level value of on-state
slope resistance
r
t2
( x I
T(AV)
< I < 20 x  x I
T(AV)
), T
J
= T
J
maximum 3.34
Maximum on-state voltage V
TM
I
pk
= 157 A, T
J
= 25 °C 1.60 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 22 V, resistive load,
initial I
T
= 2 A
200
mA
Latching current I
L
Anode supply 6 V, resistive load 400
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of
rise of turned-on current
V
DRM
 600 V
dI/dt
T
C
= 125 °C, V
DM
= Rated V
DRM
, 
Gate pulse = 20 V, 15 , t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
200
A/μs
V
DRM
 1600 V 100
Typical delay time t
d
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A dc resistive circuit
Gate pulse = 10 V, 15  source, t
p
= 20 μs
0.9
μs
Typical turn-off time t
q
T
C
= 125 °C, I
TM
= 50 A, reapplied dV/dt = 20 V/μs
dIr/dt = - 10 A/μs, V
R
= 50 V
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of 
off-state voltage
dV/dt
T
J
= T
J
maximum linear to 100 % rated V
DRM
200
V/μs
T
J
= T
J
maximum linear to 67 % rated V
DRM
500
(1)