Datasheet

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Document Number: 93712
2 Revision: 02-Jun-08
70TPS.. High Voltage Series
Vishay High Power Products
Phase Control SCR, 70 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
T(AV)
T
C
= 82 °C, 180° conduction half sine wave 70
A
Maximum continuous RMS on-state
current as AC switch
I
T(RMS)
Lead current limitation 75
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
10 ms sine pulse, rated V
RRM
applied
Initial T
J
= T
J
maximum
1200
10 ms sine pulse, no voltage reapplied 1400
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 7200
A
2
s
10 ms sine pulse, no voltage reapplied 10 200
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 102 000 A
2
√s
Low level value of threshold voltage V
T(TO)1
T
J
= 125 °C
0.916
V
High level value of threshold voltage V
T(TO)2
1.21
Low level value of on-state slope resistance r
t1
4.138
mΩ
High level value of on-state slope resistance r
t2
3.43
Maximum peak on-state voltage V
TM
100 A, T
J
= 25 °C 1.4 V
Maximum rate of rise of turned-on current dI/dt T
J
= 25 °C 150 A/µs
Maximum holding current I
H
T
J
= 25 °C
200
mA
Maximum latching current I
L
400
Maximum reverse and direct leakage current I
RRM
/I
DRM
T
J
= 25 °C
V
R
= Rated V
RRM
/V
DRM
1.0
T
J
= 125 °C 15
Maximum rate of rise of off-state voltage dV/dt T
J
= 125 °C 500 V/µs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T = 30 µs
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum required DC gate
voltage to trigger
V
GT
T
J
= - 40 °C
Anode supply = 6 V resistive load
4.0
T
J
= 25 °C 1.5
T
J
= 125 °C 1.1
Maximum required DC gate current to trigger I
GT
T
J
= - 40 °C 270
mAT
J
= 25 °C 100
T
J
= 125 °C 80
Maximum DC gate voltage not to trigger V
GD
T
J
= 120 °C, V
DRM
= Rated value 0.25 V
Maximum DC gate current not to trigger I
GD
6mA