Datasheet

5
25TTS.. SAFEIR Series
Bulletin I2116 rev. D 12/98
www.irf.com
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
1
10
100
1000
012345
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
25TTS.. Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100
(b)
(a)
Rectangular gate pulse
(4)
(3) (2) (1)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
TJ = 25 °C
TJ = 125 °C
b)Recommended load line for
Frequency Limited by PG(AV)
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
TJ = -10 °C
25TTS.. Series
IGD
VGD
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
25TTS.. Series
thJC
Transient Thermal Impedance Z (°C/W)