Datasheet

VS-ST330C Series
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Vishay Semiconductors
Revision: 20-Dec-13
6
Document Number: 94407
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 12 5 ° C
Tj = - 4 0 ° C
(2)
(3)
Instantaneous Gate Current (A)
In st a n t a n e o us G a t e V o l t a g e ( V )
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms ; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4 ms
(2) PGM = 20W, tp = 2 ms
(3) PGM = 40W, tp = 1 ms
(4) PGM = 60W, tp = 0.66 ms
Rectangular gate pulse
D e v i c e : ST3 3 0 C . . C Se r i e s
(4)
Device code
51 32 4 6 7 8 9
VS- ST 33 0 C 16 C 1 -
- Thyristor
2
- Essential part number
3
- 0 = Converter grade
4
- C = Ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- C = PUK case TO-200AB (E-PUK)
7
- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
9
8
- Critical dV/dt:
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
1 - Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95075