Datasheet

VS-ST330C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
2
Document Number: 94407
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
720 (350) A
55 (75) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 1420
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
9000
t = 8.3 ms 9420
t = 10 ms
100 % V
RRM
reapplied
7570
t = 8.3 ms 7920
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
405
kA
2
s
t = 8.3 ms 370
t = 10 ms
100 % V
RRM
reapplied
287
t = 8.3 ms 262
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 4050 kA
2
√s
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.91
V
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.92
Low level value of on-state slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.58
mΩ
High level value of on-state slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.57
Maximum on-state voltage V
TM
I
pk
= 1810 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse 1.96 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current I
L
1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20 Ω, t
r
≤ 1 μs
T
J
= T
J
maximum, anode voltage ≤ 80 % V
DRM
1000 A/µs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
1.0
µs
Typical turn-off time t
q
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, t
p
= 500 μs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum linear to 80 % rated V
DRM
500 V/µs
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 50 mA