Datasheet

VS-16TTS..PbF Series, VS-16TTS..-M3 Series
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Vishay Semiconductors
Revision: 26-Jul-13
4
Document Number: 94603
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
80
100
120
140
160
180
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Ra ted Load Condition And With
Ra ted V Applied Following Surge.
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
Peak Half Sine Wave On-state Current (A)
16TTS..Series
80
100
120
140
160
180
200
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Pe a k Half Sine Wave Fo rw a rd Current (A)
Versus Pulse Train Dura tion.
Initial T = 125°C
No Vo lta g e Reap plied
Ra t e d V Re a p p li e d
J
RRM
16TTS.. Series
1
10
100
1000
012345
T = 2 5 ° C
J
T = 125°C
J
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
16TTS.. Se rie s
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Sq uare Wave Pulse Dura t ion (s)
thJC
Steady State Value
(DC Operation)
16TTS.. Series
Si n g l e Pu l se
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Transient Thermal Impedance Z (°C/W)