Datasheet

VS-16TTS..PbF Series, VS-16TTS..-M3 Series
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Vishay Semiconductors
Revision: 26-Jul-13
3
Document Number: 94603
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Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 125 °C
Maximum thermal resistance, 
junction to case
R
thJC
DC operation 1.3
°C/W
Maximum thermal resistance, 
junction to ambient
R
thJA
62
Typical thermal resistance, 
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB
16TTS08
16TTS12
90
95
100
105
110
115
120
125
024681012
30°
60°
90°
120°
180°
Conduction Angle
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
16TTS.. Series
R (DC) = 1.3 °C/ W
thJC
90
95
100
105
110
115
120
125
0246810121416
DC
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Period
Average On-state Current (A)
16TTS.. Series
R (DC) = 1.3 °C/ W
thJC
0
2
4
6
8
10
12
14
16
18
01234567891011
RM S Li m i t
180°
120°
90°
60°
30°
Conduction Angle
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
16TTS.. Se ries
T = 1 2 5 ° C
J
0
5
10
15
20
25
0 2 4 6 8 1012141618
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
16TTS.. Series
T = 1 2 5 ° C
J