Datasheet

VS-25RIA Series
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Vishay Semiconductors
Revision: 11-Mar-14
3
Document Number: 93701
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Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum
8.0
W
Maximum average gate power P
G(AV)
2.0
Maximum peak positive gate current I
GM
T
J
= T
J
maximum 1.5 A
Maximum peak negative gate voltage -V
GM
T
J
= T
J
maximum 10 V
DC gate current required to trigger I
GT
T
J
= - 65 °C
Maximum required gate trigger 
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
90
mAT
J
= 25 °C 60
T
J
= 125 °C 35
DC gate voltage required to trigger V
GT
T
J
= - 65 °C 3.0
V
T
J
= 25 °C 2.0
T
J
= 125 °C 1.0
DC gate current not to trigger I
GD
T
J
= T
J
maximum, V
DRM
= Rated value 2.0 mA
DC gate voltage not to trigger V
GD
T
J
= T
J
maximum,
V
DRM
= Rated value
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
0.2 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
and storage temperature range
T
J
, T
Stg
- 65 to 125 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.75
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased 0.35
Allowable mounting torque
Non-lubricated threads
3.4
+ 0 - 10 %
(30)
N · m
(lbf in)
Lubricated threads
23
+ 0 - 10 %
(20)
Approximate weight
14 g
0.49 oz.
Case style See dimensions - link at the end of datasheet TO-208AA (TO-48)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180°
0.17 0.13
T
J
= T
J
maximum K/W
120°
0.21 0.22
90°
0.27 0.30
60°
0.40 0.42
30°
0.69 0.70