Datasheet

VS-25RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
2
Document Number: 93701
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Note
•t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 25RIA120S90
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° sinusoidal conduction
25 A
85 °C
Maximum RMS on-state current I
T(RMS)
40 A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
420
A
t = 8.3 ms 440
t = 10 ms
100 % V
RRM
reapplied
350
t = 8.3 ms 370
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
867
A
2
s
t = 8.3 ms 790
t = 10 ms
100 % V
RRM
reapplied
615
t = 8.3 ms 560
Maximum I
2
t for fusing I
2
t
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
8670 A
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x  x I
T(AV)
< I <  x I
T(AV)
), T
J
= T
J
maximum 0.99
V
High level value of threshold voltage V
T(TO)2
(I >  x I
T(AV)
), T
J
= T
J
maximum 1.40
Low level value of
on-state slope resistance
r
t1
(16.7 % x  x I
T(AV)
< I <  x I
T(AV)
), T
J
= T
J
maximum 10.1
m
High level value of
on-state slope resistance
r
t2
(I >  x I
T(AV)
), T
J
= T
J
maximum 5.7
Maximum on-state voltage V
TM
I
pk
= 79 A, T
J
= 25 °C 1.70 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 6 V, resistive load
130
mA
Latching current I
L
200
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise
of turned-on current
V
DRM
 600 V
dI/dt
T
J
= T
J
maximum, V
DM
= Rated V
DRM

Gate pulse = 20 V, 15 , t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
200
A/μs
V
DRM
 800 V 180
V
DRM
 1000 V 160
V
DRM
 1600 V 150
Typical turn-on time t
gt
T
J
= 25 °C, at rated V
DRM
/V
RRM
, T
J
= 125 °C 0.9
μs
Typical reverse recovery time t
rr
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, 
dI/dt = - 10 A/μs
4
Typical turn-off time t
q
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
110
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
dV/dt
T
J
= T
J
maximum linear to 100 % rated V
DRM
100
V/μs
T
J
= T
J
maximum linear to 67 % rated V
DRM
300
(1)