Datasheet

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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Vishay Semiconductors
Revision: 11-Mar-14
3
Document Number: 94392
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Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
 5 ms 12
W
Maximum average gate power P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
 5 ms
3A
Maximum peak positive gate voltage + V
GM
20
V
Maximum peak negative gate voltage - V
GM
10
Maximum DC gate current required to trigger I
GT
T
J
= - 40 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
270
mAT
J
= 25 °C 120
T
J
= 125 °C 60
Maximum DC gate voltage required to trigger V
GT
T
J
= - 40 °C 3.5
VT
J
= 25 °C 2.5
T
J
= 125 °C 1.5
DC gate current not to trigger I
GD
T
J
= T
J
maximum
Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
V
DRM
anode to cathode applied
6mA
DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction 
temperature range
T
J
- 40 to 125
°C
Maximum storage temperature range T
Stg
- 40 to 150
Maximum thermal resistance, 
junction to case
R
thJC
DC operation 0.30
K/W
Maximum thermal resistance, 
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased 0.1
Mounting torque, ± 10 %
Non-lubricated threads
15.5
(137)
N · m
(lbf · in)
Lubricated threads
14
(120)
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.042 0.030
T
J
= T
J
maximum K/W
120° 0.050 0.052
90° 0.064 0.070
60° 0.095 0.100
30° 0.164 0.165